Out-diffusion profiles of supersaturated substitutional gold in silicon

Out-diffusion profiles of supersaturated high-temperature substitutional go ld and low-temperature substitutional gold in silicon have been measured by two heat-treatment methods. The profiles of high-temperature substitutiona l gold show those for a kick-out mechanism, and supersaturated high-tempera ture substitutional gold is annealed near the specimen surface. On the othe r hand, the profiles of low-temperature substitutional gold show a flat dis tribution even after the annealing, and supersaturated low-temperature subs titutional gold agglomerates in the silicon resulting in electrically inact ive during the heat-treatment. (C) 1999 Elsevier Science B.V. All rights re served.