Copper-related defects in silicon

Authors
Citation
Sk. Estreicher, Copper-related defects in silicon, PHYSICA B, 274, 1999, pp. 424-428
Citations number
42
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
424 - 428
Database
ISI
SICI code
0921-4526(199912)274:<424:CDIS>2.0.ZU;2-Z
Abstract
Copper-related defects in Si are studied at the ab initio Hartree-Fock leve l in clusters containing up to 100 Si atoms. The defects studied are inters titial and substitutional copper, as well as one through five Cu's trapped at an internal void modeled by the ring-hexavacancy. Configurations, electr onic structures, and binding energies are calculated. The origin of the ele ctrical activity of copper precipitates and trends are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.