Depth profiles of palladium-hydrogen complexes in silicon

Wet-chemical etching of palladium doped silicon introduces at least seven n ew levels in the band gap. The depth profiles of the levels associate them with three different palladium-hydrogen complexes. An analysis of the profi les allows us to correlate the levels to complexes with one, two or three h ydrogen atoms. Evidence for a complete electrical passivation of substituti onal Pd is presented by a complex which contains at least four hydrogen ato ms. (C) 1999 Elsevier Science B.V. All rights reserved.