Effects of nitrogen on dislocations in silicon during heat treatment

By indentation at room temperature followed by annealing at high temperatur es, the pinning effect of nitrogen on dislocations in nitrogen-doped Czochr alski silicon (NCZ Silicon) has been studied. Experimental results showed t hat dislocations in NCZ Silicon moved slower and shorter than those in comm on Czochralski silicon (CZ Silicon) during the annealing. The results also indicated that the activation energy of the dislocations in NCZ Silicon was higher than that in CZ Silicon. The stress relaxing mechanism is discussed . (C) 1999 Elsevier Science B.V. All rights reserved.