Electron paramagnetic resonance (EPR) and optical absorption studies of defects created in diamond by electron irradiation damage at 100 and 350 K

Citation
Dj. Twitchen et al., Electron paramagnetic resonance (EPR) and optical absorption studies of defects created in diamond by electron irradiation damage at 100 and 350 K, PHYSICA B, 274, 1999, pp. 628-631
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
628 - 631
Database
ISI
SICI code
0921-4526(199912)274:<628:EPR(AO>2.0.ZU;2-O
Abstract
We present a study, using electron paramagnetic resonance (EPR) and optical absorption spectroscopies, of high purity synthetic type IIa diamonds, whi ch have been irradiated with 2 MeV electrons in a specially developed dewar ; allowing irradiation at a measured sample temperature down to 100 K, at d oses of 2 x 10(17) --> 4 x 10(18)e(-) cm(-2). The production rate of vacanc ies (1.53(10) cm(-1)) was the same for irradiation at 100 as at 350 K; as w as the production rate of the EPR centre R1, known to be two nearest-neighb our (0 0 1)-split interstitials (0.014(4) cm(-1)). However, the production rate of the (0 0 1)-split self-interstitial (R2 EPR centre) is 1.1(1) cm(-1 ) at 100 K and only 0.10(5) cm(-1) at 350 K. That R1 is created at 100 K in dicates that the self-interstitial is mobile under these conditions of irra diation. Production rates have also been measured for the R3 and R14 EPR ce ntres and a new centre, labelled O3. (C) 1999 Elsevier Science B.V. All rig hts reserved.