We report calculations of the Gamma(8) -Gamma(7) spin-orbit splittings of s
ubstitutional acceptor levels in silicon and diamond and corresponding Rama
n measurements for Si:X (X = B, Al, Ga, In). The calculations were performe
d using a Green's function method based on a full-zone 30 x 30 kp Hamiltoni
an together with a Slater-Koster ansatz for the acceptor potential. The res
ults are in reasonable agreement with experimental data. (C) 1999 Elsevier
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