The production and annealing stages of the self-interstitial (R2) defect in diamond

Citation
Dj. Twitchen et al., The production and annealing stages of the self-interstitial (R2) defect in diamond, PHYSICA B, 274, 1999, pp. 644-646
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
644 - 646
Database
ISI
SICI code
0921-4526(199912)274:<644:TPAASO>2.0.ZU;2-A
Abstract
We report on the production rate of the neutral (0 0 1)-split self-intersti tial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measur ed sample temperature in the interval 110-350 K with 2 MeV electrons and a beam flux of 7.5 x 10(13) electrons cm(-2) s(-1). On annealing at similar t o 700 K, we find that the neutral (0 0 1)-split self-interstitial (R2) defe ct is mobile and anneals out with an associated energy of 1.6(2) eV and som e loss of neutral vacancies. A significantly reduced production rate of R2 in the temperature interval 110-350 K is suggestive of a radiation enhanced annealing process. (C) 1999 Elsevier Science B.V. All rights reserved.