Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layers

Authors
Szatkowski, J Placzek-Popko, E Sieranski, K Hansen, OP Johansen, A Soerensen, C
Citation
J. Szatkowski et al., Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layers, PHYSICA B, 274, 1999, pp. 718-721
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
274
Year of publication
1999
Pages
718 - 721
Database
ISI
SICI code
0921-4526(199912)274:<718:DLIHIB>2.0.ZU;2-P
Abstract
He++ irradiation induced defects in Be-doped Al-0.5 Ga-0.5 As MBE layers ha ve bean studied using the DLTS method. The samples were irradiated by He+ions of an energy equal to 0.5 MeV and fluence of 10(12) cm(-2). In irradia ted samples, persistent photocapacitance was observed after illumination of the samples at the liquid nitrogen ambient. Defect (or defects) introduced during irradiation can be responsible for the observed persistent photocap acitance effect. (C) 1999 Elsevier Science B.V. All rights reserved.