Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots

Hole and electron traps at a p-n heterostructure with InGaAs/GaAs quantum d ots (QD) grown by metal organic chemical vapor deposition (MOCVD) are inves tigated by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS). The C-V and DLTS measurements allowed to detect that the region of the accumulation of the electron concentration is characterized by the pres ence of hole and electron traps. We have observed by means of deep level de fects, the population of the energy states of InGaAs quantum dots as a func tion of temperature of isochronous annealing as well as under bias-on-bias- off cooling conditions and white light illumination. (C) 1999 Elsevier Scie nce B.V. All rights reserved.