Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs

Defects in silica related to hydrogen and oxygen vacancies have been analyz ed using first principles density functional calculations. The hydrogen bri dge has been identified as the defect responsible for the stress-induced le akage current, a forerunner of dielectric breakdown. The question of Joule heating of the oxide as a result of dielectric breakdown is discussed. A cl assification scheme for defects in the short-range structure of silica is p resented. (C) 1999 Elsevier Science B.V. All rights reserved.