Radiation-induced lattice defects in InGaAsP laser diodes and their effects on device performance

Results are presented of an extended study on the degradation and recovery behavior of optical and electrical performance and on induced lattice defec ts of 1.3 mu m InGaAsP double channel planar buried heterostructure laser d iodes with an In0.76Ga0.24As0.55P0.45 multi-quantum well active region, sub jected to 1-MeV fast neutron and 1-MeV electron irradiation. The degradatio n of the device performance increases with increasing fluence. Two hole cap ture traps with near midgap energy level in the In0.76Ga0.24As0.55P0.45 mul ti-quantum well active region are observed after 1 x 10(16) n/cm(2) irradia tion. These deep levels are thought to be associated with a Ga-vacancy. The decrease of optical power is related to the induced lattice defects, leadi ng to reduction of the non-radiative recombination lifetime and of the carr ier mobility due to scattering. (C) 1999 Elsevier Science B.V. All rights r eserved.