Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs

Irradiation damage and its recovery behavior resulting from thermal anneali ng in AlGaAs/GaAs pseudomorphic HEMTs, subjected to 1-MeV electrons, 1-MeV fast neutrons and 220-MeV carbon, are studied. The drain current and effect ive mobility decrease after irradiation, while the threshold voltage increa ses in positive direction. The decrease of the mobility is thought to be du e to the scattering of channel electrons with the induced lattice defects a nd also to the decrease of the electron density in the two-dimensional elec tron gas (2DEG) region. (C) 1999 Elsevier Science B.V. All rights reserved.