Mechanism of injection-enhanced defect transformation in LPE GaAs structures

It has been shown that the electroluminescence variation in LEDs based on L PE GaAs:Si structures is a complex phenomenon, which is due to recombinatio n-enhanced decomposition of the original complex defects with intrinsic def ect appearance, subsequent diffusion of intrinsic defects and microprecipit ate creation on final stage. A theoretical model of these processes has bee n created. The numerical calculation results of the kinetics of GaAs:Si LED EL variation and intrinsic defect transformation have been presented, whic h enabled us to estimate the recombination-enhanced efficiency of complex d efect decomposition and the diffusion coefficient for intrinsic lattice def ects, apparently interstitial Ga atoms, as well as to prove that the proces ses of this intrinsic defect diffusion in GaAs layer is not recombination-e nhanced one. (C) 1999 Elsevier Science B.V. All rights reserved.