Conformation and rotational mobility of SiOCH2 radicals grafted onto the silica surface

Authors
Pergushov, VI Evtikhieva, EG Tyurin, DA
Citation
Vi. Pergushov et al., Conformation and rotational mobility of SiOCH2 radicals grafted onto the silica surface, RUSS CHEM B, 48(11), 1999, pp. 2069-2072
Citations number
16
Categorie Soggetti
Chemistry
Journal title
RUSSIAN CHEMICAL BULLETIN
ISSN journal
10665285 → ACNP
Volume
48
Issue
11
Year of publication
1999
Pages
2069 - 2072
Database
ISI
SICI code
1066-5285(199911)48:11<2069:CARMO>2.0.ZU;2-W
Abstract
The conformation of =SiOC . H-2 radicals was determined by comparison of th e ESR data and results of quantum-chemical calculations. Based on the exper imental data, the characteristic times (tau(c)) of rotational mobility of = SiOC . H-2 radicals grafted onto a silica surface were estimated over the t emperature interval from 77 (tau(c) = 15.8 10(-8) s) to 295 K (tau(c) = 1.3 .10(-8) s).