A nucleation site and mechanism leading to epitaxial growth of diamond films

A diamond nucleation site responsible for epitaxial growth of diamond on si licon by chemical vapor deposition (CVD) is identified in high-resolution t ransmission electron microscopic images. Other sites in the same sample Lea ding to polycrystalline growth, but deleterious to epitaxial CVD growth, ar e also described. A mechanism for the heteroepitaxial growth of diamond is suggested, in which etching of the nondiamond carbon binder exposes and rem oves nonadherent nanodiamond nuclei, leaving intact only those directly nuc leated on the silicon substrate. This work enhances our understanding of di amond nucleation and heteroepitaxial growth and its potential applications.