Frontier orbital model of semiconductor surface passivation: Dicarboxylic acids on n- and p-GaAs

Authors
Cohen, R Kronik, L Vilan, A Shanzer, A Cahen, D
Citation
R. Cohen et al., Frontier orbital model of semiconductor surface passivation: Dicarboxylic acids on n- and p-GaAs, ADVAN MATER, 12(1), 2000, pp. 33
Citations number
22
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
12
Issue
1
Year of publication
2000
Database
ISI
SICI code
0935-9648(20000107)12:1<33:FOMOSS>2.0.ZU;2-Q
Abstract
Semiconductor surface states can affect the performance of many electronic devices, because of the significant role they have in electron transport ac ross device interfaces. These authors use a series of dicarboxylic acids on GaAs surfaces to show that the effect is due to a HOMO-LUMO type of intera ction between the frontier orbitals of the molecules and the semiconductor surface states.