PHOTOELECTRON-SPECTROSCOPY OF SILICON-FLUORINE AND GERMANIUM-FLUORINEBINARY CLUSTER ANIONS (SINFM-,GENFM-)

Electronic properties of silicon-fluorine and germanium-fluorine clust er anions (SinFm-; n = 1-9, m = 1-3, GenFm-; n = 1-9, m = 1-3) were in vestigated by photoelectron spectroscopy using a magnetic-bottle type electron spectrometer. The binary cluster anions were generated by a l aser vaporization of a silicon/germanium rod in an He carrier gas mixe d with a small amount of SiF4 or F-2 gas. Comparison between photoelec tron spectra of SinF-/GenF- and Si-n(-)/Ge-n(-) (n = 4-9) gives the in sight that the doped F atom can remove one electron from the correspon ding Si-n(-)/Ge-n(-) cluster without any serious rearrangement of Si-n /Ge-n framework, because only the first peak of Si-n(-)/Ge-n(-), corre sponding singly occupied molecular orbital (SOMO), disappears and othe r successive spectral features are unchanged with the F atom doping.