Preparation and properties of V2O5 thin films for energy-efficient selective-surface applications

Thin V2O5 films have been prepared by thermal evaporation onto glass substr ates at a pressure of about 1.99x10(-3) Pa. The temperature dependence of e lectrical measurements exhibits an anomaly in resistivity at a temperature around 329 K. Temperature co-efficient of resistance (TCR) studies show pos itive values, so indicating semi-metallic behaviour up to a temperature of 363 K and the negative thereafter so indicating semi-conducting behaviour. Thickness-dependent resistivity measurement follows the Fuchs-Sordheimer si ze-effect theory. X-ray diffraction studies show that the material is amorp hous. Optical studies show the material is highly transparent both in the v isible and infrared regions. The integrated value of T-lum and T-sol is hig h, so indicating that the material is a potential candidate for selective s urface applications. (C) 1999 Elsevier Science Ltd. All rights reserved.