Raman spectroscopy of electrochemically self-assembled CdS quantum dots

Citation
A. Balandin et al., Raman spectroscopy of electrochemically self-assembled CdS quantum dots, APPL PHYS L, 76(2), 2000, pp. 137-139
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
2
Year of publication
2000
Pages
137 - 139
Database
ISI
SICI code
0003-6951(20000110)76:2<137:RSOESC>2.0.ZU;2-G
Abstract
We report a Raman spectroscopy investigation of electrochemically self-asse mbled quasiperiodic arrays of CdS quantum dots with characteristic feature size of 10 nm. The dots were synthesized using electrochemical deposition o f CdS into a porous anodized alumina film. Polarization-dependent Raman sca ttering study over an extended frequency range reveals the quantization of electronic states in the conduction band and intersubband transitions. Rama n peaks observed at 2919 and 3050 cm(-1) are attributed to transitions betw een the lowest two subbands. The results suggest that quantum dot arrays, p roduced by inexpensive robust electrochemical means, may be suitable for in frared detector applications. (C) 2000 American Institute of Physics. [S000 3-6951(00)02202-6].