Nanoscale backswitched domain patterning in lithium niobate

Authors
Shur, VY Rumyantsev, EL Nikolaeva, EV Shishkin, EI Fursov, DV Batchko, RG Eyres, LA Fejer, MM Byer, RL
Citation
Vy. Shur et al., Nanoscale backswitched domain patterning in lithium niobate, APPL PHYS L, 76(2), 2000, pp. 143-145
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
2
Year of publication
2000
Pages
143 - 145
Database
ISI
SICI code
0003-6951(20000110)76:2<143:NBDPIL>2.0.ZU;2-X
Abstract
We demonstrate a promising method of nanoscale domain engineering, which al lows us to fabricate regular nanoscale domain patterns consisting of strict ly oriented arrays of nanodomains (diameter down to 30 nm and density up to 100 mu m(-2)) in lithium niobate. We produce submicron domain patterns thr ough multiplication of the domain spatial frequency as compared with the el ectrode one. The fabrication techniques are based on controlled backswitche d poling. (C) 2000 American Institute of Physics. [S0003-6951(00)01402-9].