High-resolution depth profiling in ultrathin Al2O3 films on Si

A combination of two complementary depth profiling techniques with sub-nm d epth resolution, nuclear resonance profiling and medium energy ion scatteri ng, and cross-sectional high-resolution transmission electron microscopy we re used to study compositional and microstructural aspects of ultrathin (su b-10 nm) Al2O3 films on silicon. All three techniques demonstrate uniform c ontinuous films of stoichiometric Al2O3 with abrupt interfaces. These film properties lead to the ability of making metal-oxide semiconductor devices with Al2O3 gate dielectric with equivalent electrical thickness in the sub- 2 nm range. (C) 2000 American Institute of Physics. [S0003-6951(00)02402-5] .