Midinfrared studies of the contact region at superconductor-semiconductor interfaces

Citation
Ta. Eckhause et al., Midinfrared studies of the contact region at superconductor-semiconductor interfaces, APPL PHYS L, 76(2), 2000, pp. 215-217
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
2
Year of publication
2000
Pages
215 - 217
Database
ISI
SICI code
0003-6951(20000110)76:2<215:MSOTCR>2.0.ZU;2-S
Abstract
InAs quantum wells (QWs) have been used as weak links in many recent studie s of novel superconductor-normal metal-superconductor junctions. The degree of coupling between the superconducting electrodes depends sensitively on both the superconductor/InAs interface and the QW material in the weak link , factors that are difficult to separate in dc transport studies. Here we u sed midinfrared spectroscopy to investigate the superconductor/semiconducto r contact region. The remnant intersubband absorption we observe in Nb-clad InAs shows that the superconductor/InAs interface produced some confinemen t of electrons in the InAs. This confinement is, however, consistent with p hase coherent transport in the InAs. We find no evidence for charge transfe r from the superconductor to the InAs on cooling below the critical tempera ture of Nb. (C) 2000 American Institute of Physics. [S0003-6951(00)03502-6] .