Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

Authors
Vigue, F Tournie, E Faurie, JP
Citation
F. Vigue et al., Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range, APPL PHYS L, 76(2), 2000, pp. 242-244
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
2
Year of publication
2000
Pages
242 - 244
Database
ISI
SICI code
0003-6951(20000110)76:2<242:ZPPOIT>2.0.ZU;2-K
Abstract
We present the growth and characterization of p-i-n photodiodes based on Zn BeSe and ZnMgBeSe compounds. High-quality diodes exhibiting dark current as low as 12 nA/cm(2) at -2 V bias have been fabricated. The spectral respons e shows a high responsivity of 0.17 A/W at 450 nm, with a rejection of simi lar to 10(4) at longer wavelengths. Our results thus demonstrate the potent ial of ZnSe-based heterostructures for efficient detection in the visible-u ltraviolet region. (C) 2000 American Institute of Physics. [S0003-6951(00)0 3302-7].