ELECTRONIC-TRANSITIONS OF HOLES BOUND TO BORON ACCEPTORS IN ISOTOPICALLY CONTROLLED DIAMONDS

Citation
Hj. Kim et al., ELECTRONIC-TRANSITIONS OF HOLES BOUND TO BORON ACCEPTORS IN ISOTOPICALLY CONTROLLED DIAMONDS, Solid state communications, 102(12), 1997, pp. 861-865
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
102
Issue
12
Year of publication
1997
Pages
861 - 865
Database
ISI
SICI code
0038-1098(1997)102:12<861:EOHBTB>2.0.ZU;2-Y
Abstract
The excitation spectrum of holes bound to substitutional boron accepte rs introduced into a C-13 diamond is compared with that of boron accep ters in natural Type IIb, diamond. While the two spectra are remarkabl y alike in their general features, the spectrum of the accepters in C- 13 diamond is shifted to higher energies by 0.4-1.5 meV. In addition, the presence of substitutional boron relaxes the selection rule associ ated with translational symmetry, thus allowing the observation of the one phonon spectrum reflecting the density of states of the optical b ranch as well as the zone center optical phonon. (C) 1997 Elsevier Sci ence Ltd.