Wet and dry porous silicon

Authors
Koshida, N Gelloz, B
Citation
N. Koshida et B. Gelloz, Wet and dry porous silicon, CURR OP COL, 4(4), 1999, pp. 309-313
Citations number
41
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CURRENT OPINION IN COLLOID & INTERFACE SCIENCE
ISSN journal
13590294 → ACNP
Volume
4
Issue
4
Year of publication
1999
Pages
309 - 313
Database
ISI
SICI code
1359-0294(199908)4:4<309:WADPS>2.0.ZU;2-Q
Abstract
Some significant progresses have been attained in science and technology of nanocrystalline porous silicon. Especially important accomplishments are c ontrol of interfacial and structural properties, formation of nanocomposite s, observation of band dispersions, development of efficient electrolumines cent devices, and findings of novel electronic functions as a quantum-confi ned system. (C) 1999 Elsevier Science Ltd. All rights reserved.