Impact induced adsorption of C-20 on silicon (001) surface

Citation
Zy. Man et al., Impact induced adsorption of C-20 on silicon (001) surface, EUR PHY J D, 7(4), 1999, pp. 595-599
Citations number
23
Categorie Soggetti
Physics
Journal title
EUROPEAN PHYSICAL JOURNAL D
ISSN journal
14346060 → ACNP
Volume
7
Issue
4
Year of publication
1999
Pages
595 - 599
Database
ISI
SICI code
1434-6060(199912)7:4<595:IIAOCO>2.0.ZU;2-T
Abstract
Molecular dynamics simulations were carried out to investigate the adsorpti on of a low-energy C-20 on a reconstructed silicon (001)-(2 x 1) surface. T he impact energies of the C-20 fullerene range from 1 eV/atom to 5 eV/atom. After impacting, the C-20 molecule is found to move along (011) direction and resides either in the trough or on the dimer at the end of our simulati ons. The lateral motion of C-20 on the surface is dependent on its incident energy. Chemical bonds are formed between C-20 and the surface. By the for ce field analysis, we show that the anisotropic molecule-surface interactio n plays the leading role in the lateral motion of C-20 as well as its prefe rable adsorption sites on the dimerized Si surface. These findings are cons istent with experimental observations of C-60 on Si (001) surface and small carbon clusters on solid surfaces.