Band line-up of InAsP/InAlGaAs quantum well

A band line-up of InAs0.45P0.55/In-0.53 (AlxGa1-x)(0.47) As heterojunction was investigated. Type-I and type-II band line-ups were obtained according to the Al relative composition x of InAlGaAs, This band line-up variation c an be explained by assuming the conduction band discontinuity of InAsP/InP to be 0.35. A large conduction band discontinuity with type-I band line-up can be obtained with an Al relative composition x larger than 0.6 in this m aterial system, which is promising for the multi-quantum well structure of 1.3-mu m lasers with good temperature performance.