Surface phonons, electronic structure and chemical reactivity of diamond (100)(2 x 1) surface

Citation
Mz. Hossain et al., Surface phonons, electronic structure and chemical reactivity of diamond (100)(2 x 1) surface, JPN J A P 1, 38(12A), 1999, pp. 6659-6666
Citations number
55
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
12A
Year of publication
1999
Pages
6659 - 6666
Database
ISI
SICI code
Abstract
Surface phonons, electronic structure and chemical reactivity of the diamon d (100)(2 x 1) surface have been studied using electron energy loss spectro scopy (EELS), thermal desorption spectroscopy (TDS) and low-energy electron diffraction (LEED). Vibrational losses are observed at similar to 80, 92, 123, 135, 147 and 165 meV for a clean C(100)(2 x 1) surface. The 92 meV los s is assigned to the in-phase bouncing mode of the surface dimers. The orig ins of the other losses are discussed. Electronic transition is observed at 3.5 eV which is associated with the interband transition between the pi an d pi* surface states. The chemical reactivity of the C(100)(2 x 1) surface towards several gases, H, H-2, O, O-2, CO, N2O and C2H2, has been investiga ted at 90 and 300 K. The chemical reactivity of the C(100)(2 x 1) surface t owards these gases is compared with that of the Si(100)(2 x 1) surface, and the origin of the difference in the reactivity is discussed.