H. Kato et al., Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition, JPN J A P 1, 38(12A), 1999, pp. 6791-6796
The effect of ozone annealing on the charge trapping property of Ta2O5/Si3N
4/p-Si capacitors was examined by measuring high-frequency capacitance-volt
age and thermally stimulated current characteristics. The results suggest t
hat two types of electron traps exist in the Ta2O5 layer and that the ozone
annealing efficiently eliminates them.