Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition

The effect of ozone annealing on the charge trapping property of Ta2O5/Si3N 4/p-Si capacitors was examined by measuring high-frequency capacitance-volt age and thermally stimulated current characteristics. The results suggest t hat two types of electron traps exist in the Ta2O5 layer and that the ozone annealing efficiently eliminates them.