Low-resistivity highly transparent indium-tin-oxide thin films prepared atroom temperature by synchrotron radiation ablation

Authors
Akagi, Y Hanamoto, K Suzuki, H Katoh, T Sasaki, M Imai, S Tsudagawa, M Nakayama, Y Miki, H
Citation
Y. Akagi et al., Low-resistivity highly transparent indium-tin-oxide thin films prepared atroom temperature by synchrotron radiation ablation, JPN J A P 1, 38(12A), 1999, pp. 6846-6850
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
12A
Year of publication
1999
Pages
6846 - 6850
Database
ISI
SICI code
Abstract
High-transparency, low-electrical-resistivity indium-tin-oxide (ITO) thin f ilms were prepared on quartz substrates using synchrotron radiation ablatio n at room temperature. The films had a low resistivity (rho = 1.3 x 10(-4) Omega-cm) and high-transparency properties in the visible region (T = 83% a t 550nm). X-ray diffraction patterns indicate that the crystalline ITO film was obtained by room-temperature deposition.