We studied a new method of patterning a metal layer on silicon surfaces in
the nanometer range. The process combines anodic oxidation patterning with
atomic force microscopy, deposition of a Au thin film on a patterned substr
ate and chemical etching of the Si oxide that lies underneath the Au film.
When the thickness of the deposited Au film is 2-5 nm, by chemical etching
to remove the SiO2 pattern, the Au film bent down, sticking to the Si surfa
ce. For a Au film of 1 nm thickness, it was possible to selectively remove
the Au film on the SiO2 pattern by chemical etching of the SiO2 pattern.