Direct observation of LPE heterogrowth of GaAs on a GaP substrate

Authors
Tanaka, A Izumi, N Kimura, M Sukegawa, T
Citation
A. Tanaka et al., Direct observation of LPE heterogrowth of GaAs on a GaP substrate, J CRYST GR, 208(1-4), 2000, pp. 33-36
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
208
Issue
1-4
Year of publication
2000
Pages
33 - 36
Database
ISI
SICI code
0022-0248(200001)208:1-4<33:DOOLHO>2.0.ZU;2-5
Abstract
In order to observe the early stage of GaAs growth on a GaP substrate, a li quid-phase epitaxial (LPE) growth system with a long distance microscope wa s constructed. Successive photographs of growing GaAs islands within 3 min after starting the growth are presented. (C) 2000 Elsevier Science B.V. All rights reserved.