Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor

Authors
Dauelsberg, M Kadinski, L Makarov, YN Bergunde, T Strauch, G Weyers, M
Citation
M. Dauelsberg et al., Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor, J CRYST GR, 208(1-4), 2000, pp. 85-92
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
208
Issue
1-4
Year of publication
2000
Pages
85 - 92
Database
ISI
SICI code
0022-0248(200001)208:1-4<85:MAEVOT>2.0.ZU;2-G
Abstract
Modeling and experimental studies of Ga1-xInxP growth in the Planetary Reac tor(R) are presented and the mechanisms governing growth rate and compositi onal uniformity are identified. Reaction rate constants for the kinetically limited formation of wall deposits in this specific reactor are determined and included in the computational model. Several types of the Planetary Re actor are compared to each other. The reasons for the non-unity group III s olid-vapor distribution coefficient of Ga1-xInxP are analyzed. (C) 2000 Els evier Science B.V. All rights reserved.