Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition

In this article, we report the growth and characterization of InAsP/InP str ained single quantum well (SSQW), strained single quantum well (SSQW) stack , and strained multiple quantum well (SMQW) structures on (1 0 0)-oriented InP substrates grown by metalorganic chemical vapor deposition. Double-crys tal X-ray diffraction, photoluminescence (PL) and transmission electron mic roscope (TEM) are used to characterize the strained quantum wells. The high -quality crystalline InAsyP1-y(72 Angstrom)/InP SSQW structure with y less than or equal to 0.36 exhibits a 9.9 meV full-width at half-maximum (FWHM) of 10 K PL spectra. The peaks in the PL spectra for SSQW stack structure wi th a well thickness of 8, 14, and 35 Angstrom vanish above 100, 150, and 29 6 K, respectively, presumably due to the decrease of photons yielded by ele ctron-hole recombination in thinner quantum well regions on increasing the temperature. The PL peak emission energy dependence of well thickness in th e InAsP/InP SSQW stack structure is in good agreement with the calculated r esults. In addition, the variations of the PL peak energy and FWHM in all t he InAsP/InP SSQW, SSQW stack, and SMQW structures are described in detail. (C) 2000 Elsevier Science B.V. All rights reserved.