Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method

A 28 mm in length and 15 mm in diameter single-crystalline InxGa1-xAs terna ry bulk crystal was grown on GaAs seed crystal using the multi-component zo ne melting method. The InAs composition of the grown crystal was gradually increased from 0.04 at the initial growth interface to 0.33 by decreasing t he growth temperature as in the vertical gradient freeze method during grow th of 24 mm length, and then maintained at 0.34 +/- 0.01 for the following growth of 4 mm length by making the sample travel at a rate nearly equal to the growth rate without lowering the furnace temperature. This combination of temperature and sample traveling rate control enabled the growth of hom ogeneous In0.3Ga0.7As ternary bulk crystal. (C) 2000 Elsevier Science B.V. All rights reserved.