Nc. Wu et al., The morphology and formation mechanism of aluminum nitride nanocrystals synthesized by chemical vapor deposition, J CRYST GR, 208(1-4), 2000, pp. 189-196
Nanocrystal aluminum nitride (AIN) powders were obtained by the chemical va
por deposition (CVD) process via the AICl(3)-NH3-N-2 system at 1323 K with
various total flow rates. The morphology and formation mechanism of the syn
thesized AIN powders were characterized by X-ray diffraction (XRD) and tran
smission electron microscopy (TEM). It has been shown that all of the obtai
ned powders exclusively belong to the single-phase AlN and do not depend on
the variation of the total flow rate of the 1 : 1 molar ratio of the gas m
ixture of NH3/N-2. On the other hand, the crystal shapes were affected by t
he position of the entry/mixing of the reacting gases of AlCl3 and NH3. The
average crystal size of the AIN powders was decreased from 35.0 to 12.5 nm
as the gas-mixture flow rates were increased from 200 to 800 cm(3)/min. A
crystal growth model of the AIN powders has been proposed for the stages of
the adsorption/desorption rates in the inlet zone of the reacting gases --
> AlN formation --> crystal growth --> crystal agglomeration. (C) 2000 Else
vier Science B.V. All rights reserved.