Study on defects in EMCZ-Si crystal by infrared light scattering tomography

Electromagnetic Czochralski method is newly developed to grow CZ-Si crystal , thus crystals obtained by this technique are called as the EMCZ-Si crysta l. Defects in the EMCZ-Si crystals were, for the first time, studied by mul ti-chroic infrared light scattering tomography. The dislocation lines locat ed on a few crystallographic planes along different directions were observe d at the local positions in the crystal by a method of layer-by-layer tomog raphy. Because the defect character in the EMCZ-Si crystal and the V/G rati o (V the growth rate, G the axial temperature gradient) used to grow this c rystal are similar to those of the CZ-Si crystals grown under three differe nt cusp magnetic field configurations, the defects in the EMCZ-Si crystal a re also thought to be of the interstitial-type, which further agglomerated to form dislocation lines and/or dislocation clusters. The bases of announc ing the defect to be the interstitial-type have been explained in the prese nt and other reference papers. (C) 2000 Elsevier Science B.V. All rights re served.