Three-dimensional simulation of vertical zone-melting crystal growth: symmetry breaking to multiple states

Authors
Citation
Cw. Lan et Mc. Liang, Three-dimensional simulation of vertical zone-melting crystal growth: symmetry breaking to multiple states, J CRYST GR, 208(1-4), 2000, pp. 327-340
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
208
Issue
1-4
Year of publication
2000
Pages
327 - 340
Database
ISI
SICI code
0022-0248(200001)208:1-4<327:TSOVZC>2.0.ZU;2-M
Abstract
For the first time three dimensional simulation is conducted for vertical z one-melting crystal growth, simultaneously considering the time-dependent f luid flow, heat transfer, and moving interfaces. The numerical method is ba sed on an efficient finite-volume method with front tracking. The growth of 2-cm diameter GaAs in a quartz ampoule is used as an example. Under an axi symmetric operation, the two-dimensional solution can bifurcate subcritical ly to three-dimensional ones as the convection or superheating increases. T he three-dimensional modes, which can have either one- or two-fold symmetry , depend on the equilibrium aspect ratio of the molten zone. Under normal g ravity, the axisymmeric mode exists only for low superheating. Furthermore, the multiple slates, including other multi-fold modes, are path dependent, which are further illustrated though the dynamics of heating and cooling o perations. (C) 2000 Elsevier Science B.V. All rights reserved.