Growing high-quality C-60 films by using Sb buffer layer

The structure and growth morphologies of C-60 films, prepared by pre-deposi ting a layer of surfactant Sb over NaCl(0 0 1) substrates with vacuum vapor deposition method, were studied by a transmission electron microscope. It was found that the structure and growth behavior of C-60 films is significa ntly affected by Sb and the substrate temperatures. The thickness of pre-de posited Sb film has a great effect on the quality of C-60 films, and the op timal thickness for high-quality C-60 film growth is about 0.5 nm, (1 1 1) oriented C-60 single-crystal films with large C-60 crystal grains were obta ined when the substrate temperatures were kept at 170 and 185 degrees C, re spectively. Possible growth mechanisms of the Sb-buffered C-60 films are pr oposed. (C) 2000 Elsevier Science B.V. All rights reserved.