Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas

Silicon carbide growth by sublimation sandwich method in the atmosphere of an inert gas is studied both experimentally and theoretically. An analytica l description of diffusion transport of gaseous reactive species, coupled w ith quasi-equilibrium heterogeneous reactions at the source-wafer and subst rate surfaces is derived. The species transport inside the sandwich cell is shown to be essentially determined by conditions in the ambience. The grow th rate is studied as a function of process parameters (substrate temperatu re, temperature difference between the source-wafer and the substrate, and others). The developed approach is extended to the transient from the diffu sion to the collisionless regime of the species transport. The theoretical results are in good agreement with the experimental data obtained. (C) 2000 Published by Elsevier Science B.V. All rights reserved.