MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001)

High-quality cubic GaN epilayer on GaAs(0 0 1) was grown by molecular beam epitaxy equipped with radio frequency nitrogen source. The optimized growth condition is to grow two monolayers thick initial GaN at 600 degrees C und er As atmosphere. X-ray diffraction rocking curve shows that the full-width at half-maximum of cubic GaN(0 0 2) diffraction peak is 10 arcmin. The X-r ay reciprocal space mapping is used to identify the secondary hexagonal pha se and estimate their relative content. (C) 2000 Elsevier Science B.V. All rights reserved.