The photoluminescence in directly si-doped self-organized InAs quantum dots
was systematically studied. With doping, a decrease in linewidth and a lit
tle blue shift in peak were observed by PL measurement. The results show th
at direct doping when growing InAs layer may be helpful to the formation of
uniform small quantum dots. The work will be meaningful for the fabricatio
n of self-organized InAs quantum dots semiconductor device.