The effect of dopant Si on the uniformity of self-organized InAs quantum dots

The photoluminescence in directly si-doped self-organized InAs quantum dots was systematically studied. With doping, a decrease in linewidth and a lit tle blue shift in peak were observed by PL measurement. The results show th at direct doping when growing InAs layer may be helpful to the formation of uniform small quantum dots. The work will be meaningful for the fabricatio n of self-organized InAs quantum dots semiconductor device.