In-plane and out-of-plane magnetoresistance in Bi2Sr2CaCu2O8+x with various carrier densities

Citation
G. Heine et al., In-plane and out-of-plane magnetoresistance in Bi2Sr2CaCu2O8+x with various carrier densities, J L TEMP PH, 117(5-6), 1999, pp. 1253-1257
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LOW TEMPERATURE PHYSICS
ISSN journal
00222291 → ACNP
Volume
117
Issue
5-6
Year of publication
1999
Pages
1253 - 1257
Database
ISI
SICI code
0022-2291(199912)117:5-6<1253:IAOMIB>2.0.ZU;2-A
Abstract
The in-plane and out-of-plane magnetoresistance of Bi2Sr2CaCu2O8+x single c rystals was investigated in magnetic fields of 12 T, oriented parallel to t he c axes. Crystals with different carrier concentrations, corresponding to the underdoped, optimally doped, and overdoped region of the phase diagram of high-temperature superconductors, were prepared by variation of the oxy gen content. Above the critical temperature, the magnetoresistance is posit ive for in-plane and negative for out-of-plane currents in all samples. Wit h recent theories for superconducting order-parameter fluctuations, the in- plane magnetoresistance can be described well for all samples. Only the out -of-plane nzagrzetoresistance of the underdoped crystal shows distinct devi ations from the theoretical predictions and appears to be influenced by the 'pseudo-gap'.