SENSITIZING EFFECT OF TM3-M EMISSION FROM DY3+-DOPED GE25GA5S70 GLASS( ON 2.9 MU)

Citation
J. Heo et al., SENSITIZING EFFECT OF TM3-M EMISSION FROM DY3+-DOPED GE25GA5S70 GLASS( ON 2.9 MU), Journal of non-crystalline solids, 212(2-3), 1997, pp. 151-156
Citations number
16
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
212
Issue
2-3
Year of publication
1997
Pages
151 - 156
Database
ISI
SICI code
0022-3093(1997)212:2-3<151:SEOTEF>2.0.ZU;2-M
Abstract
Energy transfer mechanisms and the effect of Tm3+ addition on the inte nsity of the Dy3+:2.9 mu m emission from Ge25Ga5S70 glass were investi gated. Intensity of the 2.9 mu m fluorescence from Dy3+ increased with increasing Tm3+ content when the Dy3+ concentration remained constant , which indicates the presence of an efficient energy transfer between Tm3+ and Dy3+. A decrease in the measured lifetimes of the Tm3+:F-3(4 ) level and a wide spectral overlap between the Tm3+:1.8 mu m emission and the absorption of Dy3+:H-6(15/2)-->H-6(11/2) also supported the p roposed energy transfer scheme. Analyses of the emission intensities a nd decay times suggested that a direct energy transfer from the Tm3+:F -3(4) level to Dy3+:H-6(11/2) level occurred after a fast diffusion-li mited migration fo the excitation energy among Tm3+.