THE EFFECT OF ULTRAVIOLET-IRRADIATION ON THE MINORITY-CARRIER RECOMBINATION LIFETIME OF OXIDIZED SILICON-WAFERS

Authors
LEE WP KHONG YL MUHAMAD MR TOU TY
Citation
Wp. Lee et al., THE EFFECT OF ULTRAVIOLET-IRRADIATION ON THE MINORITY-CARRIER RECOMBINATION LIFETIME OF OXIDIZED SILICON-WAFERS, Journal of the Electrochemical Society, 144(5), 1997, pp. 103-105
Citations number
11
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
144
Issue
5
Year of publication
1997
Pages
103 - 105
Database
ISI
SICI code
0013-4651(1997)144:5<103:TEOUOT>2.0.ZU;2-X
Abstract
The effect of ultraviolet (UV) irradiation on the minority carrier rec ombination lifetime was studied using a laser-microwave photoconductan ce (LM-PCD) method for wafers oxidized at 700, 900, and 1000 degrees C and for different oxidation times at these temperatures. For wafers o xidized at 1000 degrees C, the lifetime was found to decrease with UV irradiation. For wafers oxidized at 700 and 900 degrees C, the lifetim es could decrease or increase depending on the duration of oxidation a nd UV irradiation.