FABRICATION OF SINGLE-CRYSTALLINE SIC LAYER ON HIGH-TEMPERATURE GLASS

Single crystalline 6H-SiC layers have been transferred from SiC wafers implanted with H-2 at 160 keV with 5.0 x 10(16) ion cm(-2) onto a hig h temperature (800 degrees C) glass by anodic bonding and subsequent l ayer splitting at 725 degrees C. The relatively rough SiC surface (rms 20 Angstrom) prevents direct bonding but appears to be no obstacle fo r anodic bonding with glass. The activation energy of formation of opt ically detectable surface blisters caused by hydrogen filled microcrac ks in SiC samples served as a guideline to find a process window for t he layer transfer approach.