Metallization of CVD diamond films by ion beam assisted deposition

An ion beam assisted deposition (IBAD) technique was employed to prepare Ti /Ni intermediate layers. These intermediate layers were between the magnetr on sputtered AuSn film and chemical vapor deposited diamond (CVDD) substrat e. IBAD was shown to be very effective in the development of a reliable met allization system for CVDD. The LEAD method increased the interface adhesio n between the Ti/Ni layers and CVDD due to the formation of TiC at the diam ond-metal interface. The solid state reaction product of such a CVDD/Ti/Ni/ AuSn system annealed at 300 degrees C was investigated by Rutherford backsc attering spectrometry. The results showed the interaction between the metal s in both AuSn and Ni layers of the CVDD/Ti/Ni/AuSn sample during the post- deposition annealing. (C) 2000 Elsevier Science S.A. All rights reserved.