Preparation of highly oriented alpha-In2Se3 thin films by a simple technique

alpha-In2Se3 thin films were prepared by sequential thermal evaporation of indium and selenium layers followed by annealing in flowing argon. The stru cture and the phase of the films were confirmed by X-ray diffraction (XRD), scanning electron microscope (SEM), microprobe analysis, optical absorptio n, Raman measurements and room temperature conductivity measurements. The i nfluence of the preparation on the formation of different In2Se3-modificati ons is discussed. (C) 2000 Published by Elsevier Science S.A. All rights re served.