Transparent conducting CeO2-SiO2 thin films

Citation
B. Zhu et al., Transparent conducting CeO2-SiO2 thin films, MATER RES B, 34(10-11), 1999, pp. 1507-1512
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
34
Issue
10-11
Year of publication
1999
Pages
1507 - 1512
Database
ISI
SICI code
0025-5408(199907/08)34:10-11<1507:TCCTF>2.0.ZU;2-5
Abstract
A new type of transparent thin films, based on two-phase materials of CeO2- SiO2, was developed. The films were prepared on indium tin oxide (ITO)coate d glass via a sol-gel process. A study of cyclic voltammetry was conducted on the films, using an electrolyte of 1 M LiClO4 in propylene carbonate. Li + insertion/disinsertion took place in the film. For a 25 nn thick CeO2-SiO 2 film with 50% silica, the capacity of the charge exchange reached 6-7 mC/ cm(2). After 380 cycles, the charge density dropped by similar to 30%. In b oth Li+-intercalated and free states, the films were highly transparent for visible light. Such films have potential application in counter-electrodes for electrochromic smart windows and other electrochemical devices. (C) 20 00 Elsevier Science Ltd.