Electrical characterization and type conversion in N+ irradiated CdS thin films prepared by chemical bath deposition

Authors
Narayanan, KL Rajaraman, R Valsakumar, MC Nair, KGM Vijayakumar, KP
Citation
Kl. Narayanan et al., Electrical characterization and type conversion in N+ irradiated CdS thin films prepared by chemical bath deposition, MATER RES B, 34(10-11), 1999, pp. 1729-1734
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
34
Issue
10-11
Year of publication
1999
Pages
1729 - 1734
Database
ISI
SICI code
0025-5408(199907/08)34:10-11<1729:ECATCI>2.0.ZU;2-
Abstract
Type conversion due to nitrogen ion irradiation in CdS thin films prepared by chemical bath deposition (CBD) is reported. The films were bombarded wit h various doses of nitrogen ions in the range 10(14)-10(17) ions/cm(2), at an energy of 130 keV. The electrical conductivity of the firms was found to increase with increase in nitrogen ion concentration. The temperature depe ndence of conductivity showed an activation energy of 0.06 eV, indicating s hallow level formation due to implantation. Hot-probe measurements revealed p-type conductivity in implanted samples and n-type conductivity in unirra diated samples. X-ray diffraction results revealed CdS to be the predominan t phase even after nitrogen ion irradiation. (C) 2000 Elsevier Science Ltd.